Back to Search
Start Over
Rashba spin–orbit effect on dwell time of electrons tunneling through semiconductor barrier
- Source :
- Physics Letters A. 372:2127-2132
- Publication Year :
- 2008
- Publisher :
- Elsevier BV, 2008.
-
Abstract
- A study on characteristics of electrons tunneling through semiconductor barrier is evaluated, in which we take into account the effects of Rashba spin–orbit interaction. Our numerical results show that Rashba spin–orbit effect originating from the inversion asymmetry can give rise to the spin polarization. The spin polarization does not increase linearly but shows obvious resonant features as the strength of Rashba spin–orbit coupling increases, and the amplitudes of spin polarization can reach the highest around the first resonant energy level. Furthermore, it is found that electrons with different spin orientations will spend quite different time through the same heterostructures. The difference of the dwell time between spin-up and spin-down electrons arise from the Rashba spin–orbit coupling. And it is also found that the dwell time will reach its maximum at the first resonant energy level. It can be concluded that, in the time domain, the tunneling processes of the spin-up and spin-down electrons can be separated by modulating the strength of Rashba spin–orbit coupling. Study results indicate that Rashba spin–orbit effect can cause a nature spin filter mechanism in the time domain.
- Subjects :
- Physics
Condensed matter physics
Spin polarization
business.industry
media_common.quotation_subject
General Physics and Astronomy
Spin–orbit interaction
Electron
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Asymmetry
Dwell time
Semiconductor
Condensed Matter::Strongly Correlated Electrons
Time domain
business
Computer Science::Databases
Quantum tunnelling
media_common
Subjects
Details
- ISSN :
- 03759601
- Volume :
- 372
- Database :
- OpenAIRE
- Journal :
- Physics Letters A
- Accession number :
- edsair.doi...........ab02f60b9a89cb1e40ba85a96e0fcedc