Rashba spin–orbit effect on dwell time of electrons tunneling through semiconductor barrier

A study on characteristics of electrons tunneling through semiconductor barrier is evaluated, in which we take into account the effects of Rashba spin–orbit interaction. Our numerical results show that Rashba spin–orbit effect originating from the inversion asymmetry can give rise to the spin polarization. The spin polarization does not increase linearly but shows obvious resonant features as the strength of Rashba spin–orbit coupling increases, and the amplitudes of spin polarization can reach the highest around the first resonant energy level. Furthermore, it is found that electrons with different spin orientations will spend quite different time through the same heterostructures. The difference of the dwell time between spin-up and spin-down electrons arise from the Rashba spin–orbit coupling. And it is also found that the dwell time will reach its maximum at the first resonant energy level. It can be concluded that, in the time domain, the tunneling processes of the spin-up and spin-down electrons can be separated by modulating the strength of Rashba spin–orbit coupling. Study results indicate that Rashba spin–orbit effect can cause a nature spin filter mechanism in the time domain.