Application of heterostructured CdS/ZnS quantum dots as luminescence down-shifting layer in P3HT:PCBM solar cells

Organic photovoltaic devices (OPVs) have a shorter working lifespan and lower power conversion efficiency if compared to traditional silicon-based solar cells. Intending to increase the lifespan and improve the performance of OPVs, in this work we have applied a layer of Cadmium Sulfide (CdS) Quantum Dots (QDs) encapsulated in Zinc Sulfide (CdS/ZnS) to act as a luminescence down-shifting (LDS) layer in poly(3-hexylthiophene-2,5-diyl) (P3HT):phenyl-C61-butyric-acid-methyl ester (PCBM) organic solar cell. The QDs were synthesized by the hot injection route and deposited by casting on a device with ITO/PEDOT:PSS/P3HT:PCBM/Al structure. OPVs with and without the LDS layer of QDs were tested over time of exposure to the illumination of an AM1.5 solar simulator. The results showed that in the cells with the QDs layer, there was an increase in Open Circuit Voltage (Voc), Short Circuit Current Density (Jsc), Fill Factor (FF), and Power Conversion Efficiency (η), after 70 min of exposure, reaching a peak of these parameter values around 120 min of light exposure, while in the cells without the LDS layer, these parameters have decreased over the entire exposure time. This behavior was explained taking into account the improvement of the photoluminescence (PL) yield by the QDs film and the illumination process.