A 24–48-GHz low power low noise amplifier using gain peaking techniques

This paper presents a 24–48-GHz low power high gain low noise amplifier (LNA) in a 90-nm LP CMOS process. The asymmetrical T-coils, together with gate-inductive peaking, not only enhance the wideband gain, but also facilitate the layout design and reduce the chip area. The fabricated LNA circuit exhibits a broadband of 24–48-GHz and an average gain of 20 dB, while consuming a dc current of 17.6 mA from a 1.2 V supply. The minimum noise figure is only 3.1dB. This monolithic integrated circuit achieves excellent relative bandwidth of 67% compared with the previous published millimeter-wave (MMW) CMOS amplifiers.