Back to Search Start Over

Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique

Authors :
Marc Heyns
Aaron Thean
Niamh Waldron
D. Vanhaeren
Nadine Collaert
Hugo Bender
C Merckling
Bastien Douhard
Sijia Jiang
W Guo
O. Richard
Alain Moussa
Matty Caymax
Wilfried Vandervorst
Source :
Journal of Applied Physics. 114:033708
Publication Year :
2013
Publisher :
AIP Publishing, 2013.

Abstract

Heterogeneous integration of III–V semiconductors on Si substrate has been attracting much attention as building blocks for next-generation electronics, optoelectronics, and photonics. In the present paper, we studied the selective area epitaxial studies of InP grown on 300 mm on-axis Si (001) substrates patterned with Shallow Trench Isolation (STI) using the necking effect technique to trap crystalline defects on the sidewalls. We make use of a thin Ge buffer in the bottom of the trench to reduce interfacial strain at the interface and to promote InP nucleation. We could show here, by systematic analysis, the strong impact of the growth temperatures and pressures of the InP layer on the growth uniformity along the trench and crystalline quality that we correlated with resistance changes and interdiffusion measured in the III–V layer. The key challenge remains in the ultimate control of crystalline quality during InP selective growth in order to reduce defect density to enable device-quality III–V virtual substrates on large-scale Si substrates.

Details

ISSN :
10897550 and 00218979
Volume :
114
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........ac15f40230b6219b68ecd2ef333de0ec
Full Text :
https://doi.org/10.1063/1.4815959