Synthesis of semiconductor nanostructures in an argon arc

In this paper, the synthesis of semiconductor spherical nanostructures is carried out by the plasma-chemical method. The sizes of the obtained nanospheres range from 100 nm to 1 mm. These structures are open on one side, have thin walls with a thickness of several nanometers, which end with “tentacles” with a diameter of several nanometers. Since the synthesis involved three elements of the fourth group of the periodic table (germanium, silicon, carbon), it has not yet been possible to determine the crystal structure of the obtained samples. All three elements are present on the surface of the sample in atomic percentages Ge-2.5%, Si-8%, C-55%. In addition to these elements, oxygen is also present in the spectrum.