Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils

We have fabricated self-aligned thin-film transistors (TFTs) using a ultra-low temperature ( T 2 O 3 gate dielectric films. The TFT performances were enhanced by plasma oxidation of the polycrystalline Si surface prior to Al 2 O 3 gate dielectric film deposition. The fabricated TFT showed a field effect mobility of 95 cm 2 /Vs, a threshold voltage of −3 V and a sub-threshold swing of 0.45 V/dec.