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SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors
- Source :
- Japanese Journal of Applied Physics. 57:06KA03
- Publication Year :
- 2018
- Publisher :
- IOP Publishing, 2018.
-
Abstract
- Stacked gate dielectrics consisting of wide bandgap SiO2 insulators and thin aluminum oxynitride (AlON) interlayers were systematically investigated in order to improve the performance and reliability of AlGaN/GaN metal–oxide–semiconductor (MOS) devices. A significantly reduced gate leakage current compared with that in a single AlON layer was achieved with these structures, while maintaining the superior thermal stability and electrical properties of the oxynitride/AlGaN interface. Consequently, distinct advantages in terms of the reliability of the gate dielectrics, such as an improved immunity against electron injection and an increased dielectric breakdown field, were demonstrated for AlGaN/GaN MOS capacitors with optimized stacked structures having a 3.3-nm-thick AlON interlayer.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
Dielectric strength
business.industry
Band gap
General Engineering
General Physics and Astronomy
Heterojunction
02 engineering and technology
Dielectric
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
Capacitor
law
0103 physical sciences
Optoelectronics
Thermal stability
Field-effect transistor
0210 nano-technology
business
Layer (electronics)
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 57
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........ad99065d8471446d4f4720b93e68dad6
- Full Text :
- https://doi.org/10.7567/jjap.57.06ka03