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SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Authors :
Akitaka Yoshigoe
Takahiro Yamada
Kenta Watanabe
Takuji Hosoi
Masahiro Ishida
Takayoshi Shimura
Heiji Watanabe
Daiki Terashima
Mikito Nozaki
Tetsuzo Ueda
Yoshiharu Anda
Satoshi Nakazawa
Source :
Japanese Journal of Applied Physics. 57:06KA03
Publication Year :
2018
Publisher :
IOP Publishing, 2018.

Abstract

Stacked gate dielectrics consisting of wide bandgap SiO2 insulators and thin aluminum oxynitride (AlON) interlayers were systematically investigated in order to improve the performance and reliability of AlGaN/GaN metal–oxide–semiconductor (MOS) devices. A significantly reduced gate leakage current compared with that in a single AlON layer was achieved with these structures, while maintaining the superior thermal stability and electrical properties of the oxynitride/AlGaN interface. Consequently, distinct advantages in terms of the reliability of the gate dielectrics, such as an improved immunity against electron injection and an increased dielectric breakdown field, were demonstrated for AlGaN/GaN MOS capacitors with optimized stacked structures having a 3.3-nm-thick AlON interlayer.

Details

ISSN :
13474065 and 00214922
Volume :
57
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........ad99065d8471446d4f4720b93e68dad6
Full Text :
https://doi.org/10.7567/jjap.57.06ka03