Electro-optical modulation in silicon-silicon/germanium quantum-well structures

Authors :: Lionel R. Friedman
Richard A. Soref
Source :: Physical Concepts and Materials for Novel Optoelectronic Device Applications II.
Publication Year :: 1993
Publisher :: SPIE, 1993.
Abstract: A new, fast, intersubband 1.55 micrometers electro-optic modulator in the SiGe/Si/CaF 2 -on- Si stepped-quantum-well system is proposed and analyzed. At applied electric fields of +/- 8 V/micrometers , resonant 1 - 3 conduction-intersubband absorption is predicted to given 18 dB of optical extinction for narrow-linewidth transitions. The procedure for incorporating conduction band nonparobolicity for higher lying subbands is described, and the issue of narrow linewidths is discussed.

Subjects :: Materials science
Silicon silicon
Silicon
business.industry
chemistry.chemical_element
Germanium
chemistry
Modulation
Electric field
Optoelectronics
Absorption (electromagnetic radiation)
business
Conduction band
Quantum well

ISSN :: 0277786X
Database :: OpenAIRE
Journal :: Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Accession number :: edsair.doi...........ae798014afcbe8b7054e56c2122e2353
Full Text :: https://doi.org/10.1117/12.162773