LOW TEMPERATURE PREPARATION OF (Bi,Nd)4TI3O12 THIN FILMS BY LIQUID-DELIVERY MOCVD USING NEODYMIUM PRECURSORS WITH HIGH DEPOSITION EFFICIENCY

One of the problems to be solved to fabricate neodymium substituted bismuth titanate (Bi,Nd)4Ti3O12 (BNT) films by liquid-delivery MOCVD method is that neodymium is hardly deposited into obtained films. In order to increase the deposition amount of neodymium in films, we used Nd(TMOD)3 coordinated with adducts such as 2,2′-bipyridyl (bpy) and 1,10-phenanthrorine (phen) as a neodymium precursor. When the precursor solution including Nd(TMOD)3bpy or Nd(TMOD)3phen was used, the deposition amount of neodymium in films was increased, as compared with the deposition by the precursor solution including Nd(TMOD)3 which was not coincided with target component of BNT film of Bi : Nd : Ti = 3.25 : 0.75 : 3. By optimizing the precursor combination and the mixing ratio, preferentially c-axis oriented BNT films with the target component could be fabricated at the substrate temperature as low as 500°C.