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MOLECULAR BEAM EPITAXIAL GROWTH AND STRUCTURE OF COBALT FILM ON GaAs(001) SURFACE
- Source :
- Acta Physica Sinica. 47:461
- Publication Year :
- 1998
- Publisher :
- Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, 1998.
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Abstract
- By using in-situ reflection high energy electron diffraction, the epitaxial growth of Co films on GaAs(001) surface is studied. When the growth temperature was 150℃, the growth process of Co films can be divided into three stages. The crystal structure of the first 3nm of the Co film is body-center-cubic(bcc) metastable phase. Then the next 4nm film is a complicated polycrystalline phase. After the thickness exceeds 7nm, the Co film is a single-crystalline hexagonal-close-packed(hcp) stable phase. This new result clears up the controversy in former experiments about the structure of the Co epilayer, and establishes, for the first time to our knowledge, a clear physical picture of the epitaxial growth of Co films on GaAs(001).
- Subjects :
- General Physics and Astronomy
Subjects
Details
- ISSN :
- 10003290
- Volume :
- 47
- Database :
- OpenAIRE
- Journal :
- Acta Physica Sinica
- Accession number :
- edsair.doi...........af0f0ea5a6c0d3ceeb40bfa6c8c33fbb