Intensity- and Temperature-Dependent Carrier Recombination inInAs/InAs1−xSbxType-II Superlattices

A judicious choice of material heterostructure could spur a breakthrough in infrared photodetector technology, for diverse uses in astronomy, medicine, and industry. Unfortunately, for this system little is known about the nonequilibrium charge-carrier dynamics, which is critical to device performance. This study outlines an approach to uniquely determine the magnitudes of the various recombination mechanisms that determine carrier lifetime, and ultimately the limitations of photodetector dark currents.