Back to Search
Start Over
Current-Voltage Model for Negative Capacitance Field-Effect Transistors
- Source :
- IEEE Electron Device Letters. 38:669-672
- Publication Year :
- 2017
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2017.
-
Abstract
- In this letter, a semi-analytical current–voltage model for a negative capacitance field-effect transistor (NCFET) with a ferroelectric material ( i.e. , BaTiO3) is proposed. Surface potential ( $\psi _{\mathrm {S}})$ in the channel region is determined first by solving the Landau–Khalatnikov (LK) equation numerically with Poisson’s equation. Then, the drain–current is achieved based on the current continuity equation using $\psi _{\mathrm {S}}$ determined earlier. In addition, by introducing a fitting potential for a given drain–voltage, threshold voltage shift can be captured, resulting in accurate surface potential and drain–current at different gate voltages. We have verified our model using the technology computer-aided design (TCAD)-MATLAB simulation, and our model exhibits an excellent agreement to the simulation results. In addition, the impacts of the ferroelectric thickness and channel doping concentration on the device performance and hysteresis window of NCFET are thoroughly explored.
- Subjects :
- 010302 applied physics
Materials science
Condensed matter physics
business.industry
Electrical engineering
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
01 natural sciences
Capacitance
Ferroelectricity
Electronic, Optical and Magnetic Materials
Threshold voltage
Hysteresis
0103 physical sciences
Field-effect transistor
Electric potential
Electrical and Electronic Engineering
0210 nano-technology
business
Negative impedance converter
Voltage
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 38
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........afb15170b55b84d25787566eedd4cdc7