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Seamless Fabrication and Threshold Engineering in Monolayer MoS 2 Dual‐Gated Transistors via Hydrogen Silsesquioxane

Authors :
Saptarshi Das
Joseph R. Nasr
Source :
Advanced Electronic Materials. 5:1800888
Publication Year :
2019
Publisher :
Wiley, 2019.

Subjects

Subjects :
Materials science
Fabrication
business.industry
Transistor
Electronic, Optical and Magnetic Materials
law.invention
Dual (category theory)
chemistry.chemical_compound
chemistry
law
Monolayer
Optoelectronics
Field-effect transistor
business
Hydrogen silsesquioxane

Details

ISSN :
2199160X
Volume :
5
Database :
OpenAIRE
Journal :
Advanced Electronic Materials
Accession number :
edsair.doi...........b06e28b9dfc01aee3d7975e93a8b9752
Full Text :
https://doi.org/10.1002/aelm.201800888
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