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Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy
- Source :
- Journal of Applied Physics. 123:161417
- Publication Year :
- 2018
- Publisher :
- AIP Publishing, 2018.
-
Abstract
- The mechanisms associated with electrical conduction through individual threading dislocations (TDs) in a Na-flux GaN crystal grown with a multipoint-seed-GaN technique were investigated by conductive atomic force microscopy (C-AFM). To focus on individual TDs, dislocation-related etch pits (DREPs) were formed on the Na-flux GaN surface by wet chemical etching, after which microscopic Pt electrodes were locally fabricated on the DREPs to form conformal contacts to the Na-flux GaN crystal, using electron beam assisted deposition. The C-AFM data clearly demonstrate that the leakage current flows through the individual TD sites. It is also evident that the leakage current and the electrical conduction mechanism vary significantly based on the area within the Na-flux GaN crystal where the TDs are formed. These regions include the c-growth sector (cGS) in which the GaN grows in the [0001] direction on top of the point-seed with a c-plane growth front, the facet-growth sector (FGS) in which the GaN grows with {...
- Subjects :
- 010302 applied physics
Materials science
business.industry
Wide-bandgap semiconductor
General Physics and Astronomy
02 engineering and technology
Conductive atomic force microscopy
021001 nanoscience & nanotechnology
01 natural sciences
Space charge
Isotropic etching
Poole–Frenkel effect
Crystal
Electrical resistivity and conductivity
0103 physical sciences
Electrode
Optoelectronics
0210 nano-technology
business
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 123
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........b089b8e1cbdd3e18cfcf9d370afcebc5