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Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes

Authors :
W. Zhao
Christian Wetzel
X. Li
J. Senawiratne
Y. Li
Y. Xia
Joel L. Plawsky
Mingwei Zhu
Theeradetch Detchprohm
Arya Chatterjee
Source :
Thin Solid Films. 518:1732-1736
Publication Year :
2010
Publisher :
Elsevier BV, 2010.

Abstract

The junction temperature of homoepitaxial green and blue GaInN/GaN quantum well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescence mapping, and forward-voltage methods and compared to finite element simulations. Dies on GaN substrate and sapphire were analyzed under variable drive current up to 200 mA (246 A/cm2). At 100 mA, dies on bulk GaN remain as cool as 355 K (83 °C) while dies on sapphire heat up to 477 K (204 °C). The efficiency droop and spectral line shift in green LEDs with increasing current density can now be separated into electrical and thermal contributions.

Details

ISSN :
00406090
Volume :
518
Database :
OpenAIRE
Journal :
Thin Solid Films
Accession number :
edsair.doi...........b09380850b58c7edf0c0756c88e5197b
Full Text :
https://doi.org/10.1016/j.tsf.2009.11.073