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Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes
- Source :
- Thin Solid Films. 518:1732-1736
- Publication Year :
- 2010
- Publisher :
- Elsevier BV, 2010.
-
Abstract
- The junction temperature of homoepitaxial green and blue GaInN/GaN quantum well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescence mapping, and forward-voltage methods and compared to finite element simulations. Dies on GaN substrate and sapphire were analyzed under variable drive current up to 200 mA (246 A/cm2). At 100 mA, dies on bulk GaN remain as cool as 355 K (83 °C) while dies on sapphire heat up to 477 K (204 °C). The efficiency droop and spectral line shift in green LEDs with increasing current density can now be separated into electrical and thermal contributions.
- Subjects :
- Materials science
business.industry
Metals and Alloys
Cathodoluminescence
Surfaces and Interfaces
Substrate (electronics)
Green-light
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Optics
law
Materials Chemistry
Sapphire
Optoelectronics
Junction temperature
business
Quantum well
Light-emitting diode
Diode
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 518
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........b09380850b58c7edf0c0756c88e5197b
- Full Text :
- https://doi.org/10.1016/j.tsf.2009.11.073