Back to Search Start Over

The Doping of Si p‐Field‐Effect Transistor Devices by Gallium Focused Ion Beam Implantation Enabling Flexible Fabrication Routes at Moderate Temperatures

Authors :
Johann W. Bartha
Christian Wenzel
Felix Winkler
C. Strobel
Source :
physica status solidi (a). 218:2000511
Publication Year :
2020
Publisher :
Wiley, 2020.

Subjects

Subjects :
Fabrication
Materials science
business.industry
Doping
chemistry.chemical_element
Surfaces and Interfaces
Condensed Matter Physics
Focused ion beam
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry
Materials Chemistry
Optoelectronics
Field-effect transistor
Electrical and Electronic Engineering
Gallium
business

Details

ISSN :
18626319 and 18626300
Volume :
218
Database :
OpenAIRE
Journal :
physica status solidi (a)
Accession number :
edsair.doi...........b0c4506e8a8a6f76a58add51d70e426b
Full Text :
https://doi.org/10.1002/pssa.202000511
Full Text Access
View/download PDF

Tools

Authors Abstract Subjects Details