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Directed self-assembly patterning for forming fin field effect transistors

Details

ISSN :
18182259
Database :
OpenAIRE
Journal :
SPIE Newsroom
Accession number :
edsair.doi...........b0f7f1588d44e7df8463769208c909dc
Full Text :
https://doi.org/10.1117/2.1201606.006519