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Activation energies for Te and Be in metamorphically grown AlSb and InxAl1−xSb layers
- Source :
- Applied Physics Letters. 87:092105
- Publication Year :
- 2005
- Publisher :
- AIP Publishing, 2005.
-
Abstract
- The activation energies of tellurium and beryllium in InxAl1−xSb grown by solid-source molecular beam epitaxy on semi-insulating GaAs substrates are reported. Temperature-dependent Hall measurements of carrier concentration show that while the activation energy of beryllium is relatively low for all compositions (EA 100meV) in the composition range between approximately 0.1
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 87
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........b10d8a7dc6ea8961f20362331d60003f
- Full Text :
- https://doi.org/10.1063/1.2032591