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Characteristics of field-induced-drain (FID) poly-Si TFTs with high on/off current ratio
Characteristics of field-induced-drain (FID) poly-Si TFTs with high on/off current ratio
- Source :
- IEEE Transactions on Electron Devices. 39:916-920
- Publication Year :
- 1992
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1992.
-
Abstract
- The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) with a field-induction-drain (FID) structure using an inversion layer as a drain are investigated. The FID structure not only reduces the anomalous leakage current, but also maintains a high on current. An off current of 1.5 pA/ mu m and an on/off current ratio of 10/sup 7/ (V/sub d/=10, V/sub g/=-20 V) are successfully obtained. These characteristics result from good junction characteristics between the p channel and n/sup +/ inversion layer. Reducing the threshold voltage of the FID region allows a simple circuit configuration for the FID TFTs. >
- Subjects :
- Materials science
Silicon
business.industry
Transistor
Electrical engineering
Analytical chemistry
chemistry.chemical_element
engineering.material
Electronic, Optical and Magnetic Materials
law.invention
Threshold voltage
P channel
Polycrystalline silicon
Current ratio
chemistry
Thin-film transistor
law
engineering
Field-effect transistor
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 00189383
- Volume :
- 39
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........b13b30bf252f254a76f6b0e0819e56f2
- Full Text :
- https://doi.org/10.1109/16.127483