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Characteristics of field-induced-drain (FID) poly-Si TFTs with high on/off current ratio

Characteristics of field-induced-drain (FID) poly-Si TFTs with high on/off current ratio

Authors :
K. Tanaka
K. Kato
K. Nakazawa
S. Suyama
Source :
IEEE Transactions on Electron Devices. 39:916-920
Publication Year :
1992
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 1992.

Abstract

The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) with a field-induction-drain (FID) structure using an inversion layer as a drain are investigated. The FID structure not only reduces the anomalous leakage current, but also maintains a high on current. An off current of 1.5 pA/ mu m and an on/off current ratio of 10/sup 7/ (V/sub d/=10, V/sub g/=-20 V) are successfully obtained. These characteristics result from good junction characteristics between the p channel and n/sup +/ inversion layer. Reducing the threshold voltage of the FID region allows a simple circuit configuration for the FID TFTs. >

Details

ISSN :
00189383
Volume :
39
Database :
OpenAIRE
Journal :
IEEE Transactions on Electron Devices
Accession number :
edsair.doi...........b13b30bf252f254a76f6b0e0819e56f2
Full Text :
https://doi.org/10.1109/16.127483