Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode

Two models have been used in order to explain the anomalies observed in a Ni/SiC-6H Schottky n-type diode I(V) characteristic. Both, parallel conduction and potential fluctuation models showed that the barrier's height is around a mean value of 1.86V, corresponding to a factor of ideality of n=1. Another conclusion was that @f"B^i@?=@f"B^C=1.88V. It has been, also, explained why the Arrhenius or Richardson plot (ln(I"s/T^2) versus 1/T) is not linear and why the area of the low barrier height A"l, representing a defective zone, is approximately about 0.12% of the total area contact.