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Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si*

Authors :
Qian Wang
Quan Wang
Hongling Xiao
Jiang Lijuan
Chun Feng
Wei Li
Xiaoliang Wang
Jiankai Xu
Source :
Chinese Physics B. 30:118101
Publication Year :
2021
Publisher :
IOP Publishing, 2021.

Abstract

The effect of nitrogen flow and growth temperature on extension of GaN on Si substrate has been studied. By increasing the nitrogen flow whose outlet is located in the center of the MOCVD (metal–organic chemical vapor deposition) gas/particle screening flange and by increasing the growth temperature of HT-AlN and AlGaN buffer layers near the primary flat of the wafer, the GaN layer has extended more adequately on Si substrate. In the meantime, the surface morphology has been greatly improved. Both the AlN and GaN crystal quality uniformity has been improved. X-ray diffraction results showed that the GaN (0002) XRD FWHMs (full width at half maximum) decreased from 579 arcsec∼ 1655 arcsec to around 420 arcsec.

Details

ISSN :
16741056
Volume :
30
Database :
OpenAIRE
Journal :
Chinese Physics B
Accession number :
edsair.doi...........b2306f33fbd7be121370e2c8784f87ce