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Atomic-scale observation and control of the reaction of phosphine with silicon

Authors :
David R. McKenzie
Michelle Y. Simmons
Steven R. Schofield
Marian W. Radny
Neil J. Curson
Phillip V. Smith
Hugh F. Wilson
Oliver Warschkow
Nigel A. Marks
Source :
e-Journal of Surface Science and Nanotechnology. 4:609-613
Publication Year :
2006
Publisher :
Surface Science Society Japan, 2006.

Abstract

The ability to identify and control the pathway by which chemical reactions occur at the level of individual atoms will be of enormous benefit in the coming age of nanotechnology. Here, we present a detailed atomic-resolution scanning tunneling microscopy (STM) study of one such pathway: the adsorption, surface diffusion and dissociation of phosphine (PH3) on silicon (001). We show that PH3 dissociates on Si(001) to produce PH2 + H, PH + 2H and P + 3H moieties. In addition, we show that PH2 molecules are readily able to diffuse on Si(001) at room temperature, resulting in the formation of hemihydride dimers on low dosed Si(001) surfaces. In addition we show that control over the processes of diffusion and surface incorporation can be achieved using STM-based hydrogen lithography; a technique that is now used in many STM laboratories. [DOI: 10.1380/ejssnt.2006.609]

Details

ISSN :
13480391
Volume :
4
Database :
OpenAIRE
Journal :
e-Journal of Surface Science and Nanotechnology
Accession number :
edsair.doi...........b2c2723ab3b94c8f80292dd5b2ec80d2
Full Text :
https://doi.org/10.1380/ejssnt.2006.609