Finding the cause of degradation of low-temperature oxide thin-film transistors

We report the cause of degradation of low-temperature amorphous indium-gallium-zinc-oxide (a-IGZO) coplanar thin-film transistors (TFTs). As the deposition temperature of the buffer layer was changed from 400 to 200 °C, the field-effect mobility decreased considerably from 15 to 3 cm2 V−1 s−1, the subthreshold swing (SS) increased from ~ 150 to 280 mV dec−1, the threshold voltage shift (ΔVth) under negative bias temperature stress (NBTS) increased from − 0.27 to − 0.33 V, and ΔVth under a positive bias temperature stress (PBTS) increased significantly from 0 to 4.9 V. From the results of high-resolution transmission electron microscopy (HR-TEM) and X-ray reflectivity (XRR), the poor roughness created by sputtering damage of the interface between the gate insulator (GI) and the a-IGZO is the cause of degradation. In addition, through an atomic probe tomography (APT) analysis, the reason low-temperature TFTs have poorer PBTS stability than NBTS is carefully to be due to zinc (Zn)-related defects that create ionized oxygen vacancies. Based on these results, we introduce strategies for realizing low-temperature oxide TFTs using vacuum process. Please confirm if the author names are presented accurately and in the correct sequence as given name, middle name/initial, family name. Also, kindly confirm the details in the metadata are correct. We confirmed all author names. Please check and confirm that the authors and their respective affiliations have been correctly identified and amend if necessary. We checked all authors and their affiliations.