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0.2-$\mu{\rm m}$ InP/GaAsSb DHBT Power Performance With 10 ${\rm mW}/\mu{\rm m}^{2}$ and 25% PAE at 94 GHz
- Source :
- IEEE Electron Device Letters. 35:321-323
- Publication Year :
- 2014
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2014.
-
Abstract
- We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of 0.20 × 9.5 μm2. Biased for highest power added efficiency (PAE), an output power of 6.62 mW/μm2 (11 dBm), a power gain of 5.2 dB, and a PAE of 27.7% have been obtained. Biased for highest output power, 10.26 mW/μm2 (12.8 dBm) has been achieved without significant degradation of the PAE (25.2%) and the power gain (4.5 dB).
- Subjects :
- Power gain
Power-added efficiency
Materials science
business.industry
dBm
Bipolar junction transistor
Load pull
Heterojunction
7. Clean energy
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
Indium phosphide
Optoelectronics
Electrical and Electronic Engineering
business
Common emitter
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 35
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........b3b43c0097d2601e5ff09fa52a665155