Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications

Authors :: Xiaobing Hu
Xixi Jiang
Jihong Bian
David Wei Zhang
Kai Zhang
Hao Zhu
Qing-Qing Sun
Lin Chen
Source :: ACS Applied Electronic Materials. 3:4711-4717
Publication Year :: 2021
Publisher :: American Chemical Society (ACS), 2021.

Subjects :: Materials science
business.industry
Materials Chemistry
Electrochemistry
Optoelectronics
Heterojunction
Field-effect transistor
business
Ferroelectricity
Electronic, Optical and Magnetic Materials

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