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Dislocations in chemical vapor deposition diamond layer detected by confocal Raman imaging
- Source :
- Journal of Applied Physics. 128:155302
- Publication Year :
- 2020
- Publisher :
- AIP Publishing, 2020.
-
Abstract
- Dislocations in a homoepitaxial diamond film grown by chemical vapor deposition (CVD) were characterized by confocal Raman imaging. The diamond film was grown on a high-pressure high-temperature (HPHT) substrate using an oxygen-adding condition to minimize dislocation formation during diamond growth. The dislocation densities in the CVD thin film and substrate were found to be 3 × 104 and 2 × 104 cm−2, respectively, from large-area Raman imaging. The spatial variation of stress around dislocations in CVD diamond was analyzed three-dimensionally using in-plane images of peak positions of diamond first-order lines taken at different depths from the diamond film surface. The variational directions of the stresses depended on the types of dislocation: ⟨110⟩ variational direction corresponds to edge [001] dislocation, whereas the ⟨100⟩ variational direction corresponds to 45° mixed [001] dislocation. Most dislocations passed through the CVD thin film from the substrate. Some dislocations were newly generated at the CVD layer–substrate interface. The dislocations in CVD diamond propagate along the [001] direction of diamond crystal with the same Burgers vector in the HPHT substrate.
- Subjects :
- 010302 applied physics
Materials science
Condensed matter physics
General Physics and Astronomy
Diamond
02 engineering and technology
Substrate (electronics)
Chemical vapor deposition
engineering.material
021001 nanoscience & nanotechnology
01 natural sciences
Stress (mechanics)
0103 physical sciences
engineering
Thin film
Dislocation
0210 nano-technology
Layer (electronics)
Burgers vector
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 128
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........b473b18fcc96165df4c6776d35a794d4