The interfaces a-Si:H/Pd and a-Si:H/ITO: Structure and electronic properties

a-Si:H/Pd and a-Si:H/ITO interfaces were examined by TEM. In the case of Pd, the influence of an oxide layer on silicide formation and the silicide structure were investigated. It is shown that the stability and electrical performance of the ITO contact on a-Si:H are mainly dependent on surface roughness and an interfacial oxide layer.