Cite
High-voltage super-junction lateral double-diffused metal—oxide semiconductor with a partial lightly doped pillar
MLA
Jian Fang, et al. “High-Voltage Super-Junction Lateral Double-Diffused Metal—oxide Semiconductor with a Partial Lightly Doped Pillar.” Chinese Physics B, vol. 22, June 2013, p. 068501. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........b4e788ea5b14bafb1b6046df39b33f6c&authtype=sso&custid=ns315887.
APA
Jian Fang, Wei Wu, Zhaoji Li, Bo Zhang, & Xiaorong Luo. (2013). High-voltage super-junction lateral double-diffused metal—oxide semiconductor with a partial lightly doped pillar. Chinese Physics B, 22, 068501.
Chicago
Jian Fang, Wei Wu, Zhaoji Li, Bo Zhang, and Xiaorong Luo. 2013. “High-Voltage Super-Junction Lateral Double-Diffused Metal—oxide Semiconductor with a Partial Lightly Doped Pillar.” Chinese Physics B 22 (June): 068501. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........b4e788ea5b14bafb1b6046df39b33f6c&authtype=sso&custid=ns315887.