Fabrication of buried quantum structures using FIB-MBE total vacuum process

In order to fabricate buried quantum structures using a total vacuum system which consists of low-energy focused ion beam and molecular beam epitaxy systems, the effects of growth interruption, passivation by As layers on GaAs and annealing after growth are investigated experimentally using δ-doping technique in the GaAs. It is found that the annealing at 800 °C for 10 s is not effective in reducing the interface states. It is concluded that the passivation by As layer is useful for the reduction of shallow interface state.