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Microwave Transistor Power Rectifiers and Applications

Authors :
Michael Litchfield
Tibault Reveyrand
Ignacio Ramos
Zoya Popovic
Source :
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Publication Year :
2016
Publisher :
IEEE, 2016.

Abstract

This paper presents design, analysis and experimental results on synchronous and self- synchronous microwave transistor rectifiers implemented with GaN HEMTs at frequencies from 2 to 10GHz. The rectifier/power amplifier duality is explained and measurements confirming this mode of operation are presented. Finally, rectifier applications in wireless power transfer and high- frequency integrated dc-dc converters are discussed, including a GaN MMIC dc-dc converter switching at 4.6GHz.

Details

Database :
OpenAIRE
Journal :
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
Accession number :
edsair.doi...........b527f23092c1c8604c74819af61be80c
Full Text :
https://doi.org/10.1109/csics.2016.7751055