Design, Fabrication, and Actuation of Micro-Electro-Mechanical System-Based Image Stabilizer

In this investigation, we present a two dimensional high aspect ratio XY stage, designed as an image stabilizer. This stabilizer is 8×8×0.75 mm3, and sufficiently strong to support a suspended image sensor for anti-shaking photographic function. This stabilizer is fabricated by the silicon-on-glass (SOG) process including inductively coupled plasma reactive ion etching (ICP-RIE) processes, in which the anchor layer, pre-etching layer and structure layers are identified without an additional release step as is required in traditional silicon-on-insulator (SOI) wafer etching process. When an actuator is fabricated, flip-chip bonding is adopted to attach a 3 megapixel image sensor to this device. The longest calculated traveling distance of the stabilizer is 25 µm and special stoppers are designed to prevent the actuator from moving out of range, and sticking to the side by pull-in phenomenon. Accordingly, the applied voltage at the 25 µm moving distance is 84 V. Furthermore, the dynamic resonant frequency of the actuating device with an image sensor is 1.013 kHz.