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Effect of δ-doped Acceptor Diffusion on Subbands of GaAs/AlAs Quantum Wells
- Source :
- Chinese Journal of Luminescence. 40:1240-1246
- Publication Year :
- 2019
- Publisher :
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 2019.
Details
- ISSN :
- 10007032
- Volume :
- 40
- Database :
- OpenAIRE
- Journal :
- Chinese Journal of Luminescence
- Accession number :
- edsair.doi...........b653839b73c8db2c1c23694cc34af821
- Full Text :
- https://doi.org/10.3788/fgxb20194010.1240