High-quality photonic device fabrication using low-energy-ion-implantation-induced intermixing

In this paper we show that low energy ion implantation of lnP based heterostructures for quantum well intermixing is a promising technique for photonic integrated devices. In order to fabricate complex optoelectronic devices with a control of the bandgap profile of the heterostructure there is a list of requirements that have to be fulfilled. We have fhhricatcd high quality discrete blueshifted laser diodes to verify the capability of low energy ion implantation induced intermixing fbr integration. We also fabricated extended cavity lasers with this technique, which demonstrated a reduction of the propagation losses down to 5.3 cm' within the integrated passive waveguides.