Hydrogen content in oxygen‐doped polysilicon film

In this paper, we use the 4He+—H elastic recoil detection to measure the hydrogen content with depth and to study the hydrogen incorporation with oxygen in semi‐insulating polysilicon (SIPOS) film; we also show that the Si—H bond stretching‐vibration frequencies from both infrared measurements and calculations of electronegativity, then discuss the behavior and the role of hydrogen in the SIPOS film.