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Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method
- Source :
- IEEE Transactions on Electron Devices. 68:2759-2763
- Publication Year :
- 2021
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2021.
-
Abstract
- We report high-performance homojunction GaN avalanche photodiodes (APDs) grown on a low-defect GaN substrate and fabricated with an ion-implantation isolation method. High-quality p-i-n GaN layers were grown using metalorganic chemical vapor deposition (MOCVD), and an effective device isolation method using optimized nitrogen ion implantation was developed to provide significant leakage current suppression on the etched mesa sidewalls. Fabricated GaN APDs showed an ultralow dark current density 106 at a reverse bias of 71.5 V under deep-ultraviolet (DUV) illumination at $\lambda =280$ nm. A further temperature-dependent study of the dark current indicated that a trap-assisted tunneling process predominates the leakage current component that also contributes to the carrier multiplication process near the avalanching breakdown.
- Subjects :
- Materials science
business.industry
Photoconductivity
Gallium nitride
Avalanche photodiode
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Ion implantation
chemistry
Optoelectronics
Metalorganic vapour phase epitaxy
Electrical and Electronic Engineering
Homojunction
business
Current density
Dark current
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 68
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........b7cddaf09965101ffb480195027c5d2f