Fabrication of photonic-crystal structures by TBAs-based MOVPE for photonic-crystal lasers

We investigate fabrication of a photonic-crystal structure by air-hole retained crystal regrowth using TBAs-based MOVPE for GaAs based photonic-crystal lasers. Air holes having a filling factor of 10 % (the depth was 250 nm and the width was 110 nm) are successfully embedded. The embedded air holes show characteristic shapes due to anisotropy of growth rate along different crystal planes, such as gallium face and arsenic face. Furthermore, a low threshold of 0.5 kAcm−2 lasing is achieved with the fabricated structure.