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Aluminum induced crystallization of amorphous Si: Thermal annealing and ion irradiation process
- Source :
- Journal of Non-Crystalline Solids. 523:119628
- Publication Year :
- 2019
- Publisher :
- Elsevier BV, 2019.
-
Abstract
- The Al-induced crystallization of amorphous (a)-Si under thermal annealing and swift heavy ion irradiation has been investigated. The c-Al (50 nm)/a-Si (150 nm) thin films have been prepared on thermally oxidized Si-substrates. A set of samples have been annealed at temperatures ranging from 100 °C to 500 °C to achieve crystallization. Another set of similar samples have been irradiated at an elevated temperature of 100 °C using 100 MeV Ni+7 ions at fluences of 1 × 1012 ions-cm−2, 5 × 1012 ions-cm−2, 1 × 1013 ions-cm−2, and 5 × 1013 ions-cm−2. The crystallization of a-Si is observed at annealing temperature of 200 °C. The crystallinity increases with increasing temperature. On the other hand, irradiation using swift heavy ion leads to crystallization of a-Si at significantly lower temperature of 100 °C. The irradiation induced crystallization is explained in terms of creation of vacancies, interstitials and mixing of Si and Al atoms at a-Si/c-metal interface due to energy deposited by swift Ni ions.
- Subjects :
- 010302 applied physics
Materials science
Annealing (metallurgy)
Analytical chemistry
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
law.invention
Ion
Amorphous solid
Crystallinity
Swift heavy ion
law
0103 physical sciences
Materials Chemistry
Ceramics and Composites
Irradiation
Crystallization
Thin film
0210 nano-technology
Subjects
Details
- ISSN :
- 00223093
- Volume :
- 523
- Database :
- OpenAIRE
- Journal :
- Journal of Non-Crystalline Solids
- Accession number :
- edsair.doi...........b9543e8b91bf625187347dcdfa60a360