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Light illumination effects on floating gate memory with Ge nanocrystals in HfO2
- Source :
- 2017 International Semiconductor Conference (CAS).
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- The influence of light illumination on the programming of a capacitor floating gate memory based on Ge nanocrystals in HfO2 was studied. The capacitor was fabricated on a c-Si substrate by magnetron sputtering deposition of a layer sequence of HfO 2 /Ge-HfO 2 /HfO 2 and post-growth rapid thermal annealing for nanocrystals formation at 600 oC. The illumination of the structure was performed through a semi-transparent Au contact (20% transparency). A maximum value of the light-induced change of 90% in C-V curve was obtained for 5 mW/cm2 illumination during +5 V writing programming. The effect of the light exposure on the relative change of the C-V curve can be increased by reducing the writing time at 1 min.
- Subjects :
- 010302 applied physics
Materials science
Silicon
business.industry
chemistry.chemical_element
Nanotechnology
02 engineering and technology
Substrate (electronics)
Sputter deposition
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
Non-volatile memory
Capacitor
Nanocrystal
chemistry
law
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Layer (electronics)
Deposition (law)
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 International Semiconductor Conference (CAS)
- Accession number :
- edsair.doi...........b96cfaa68704930a76c55bdcfec28baa