Determination of the noise source parameters in AlInAs/GaInAs HEMT heterostructures based on measured noise temperature dependence on the electric field

Authors :: C. Bergamaschi
W. Patrick
W. Baechtold
Source :: Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: The noise temperature dependence on the electric field in an AlInAs/GaInAs HEMT heterostructure has been measured. It was found that the dependence of the noise temperature on the electric field in GaAs MESFETs and in AlInAs/GaInAs HEMTs are remarkably different. For this reason a different model must be used for AlInAs/GaInAs HEMTs. Based on the measured noise temperature dependence on the electric field, am analytic noise model for the AlInAs/GaInAs HEMT has been developed. The noise source parameters were calculated and compared with extracted noise source parameters from noise measurements. >

Subjects :: Noise temperature
Materials science
business.industry
Astrophysics::Instrumentation and Methods for Astrophysics
Heterojunction
High-electron-mobility transistor
Gallium arsenide
chemistry.chemical_compound
chemistry
Electric field
Equivalent circuit
Optoelectronics
business
Noise (radio)

Database :: OpenAIRE
Journal :: Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)
Accession number :: edsair.doi...........b971fbcae9efabf9deeebeeb056ee6d6
Full Text :: https://doi.org/10.1109/iciprm.1994.328150

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