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Influence of Electrosprayed MoSe2 Antireflective Surface Coatings on Performance of Multicrystalline Silicon Solar Cell

Authors :
S. Arun Kumar
Rathanasamy Rajasekar
S. Santhosh
V. K. Gobinath
C. Moganapriya
A. Manju Sri
Source :
Silicon. 14:6039-6051
Publication Year :
2021
Publisher :
Springer Science and Business Media LLC, 2021.

Abstract

The present scenario indefinitely needs certain developments in the field of renewable energy as an effective replacement of conventional energy sources. Reflection loss in solar cell is one of the reasons for reduction in power conversion efficiency which can be controlled through antireflective coatings on solar cell surface. This current research focuses on the development of MoSe2 nano-crystalline structure as an effective antireflective material for attaining enhanced light trapping ability. Electrospraying technique was taken into account for the deposition of thin films over the solar cell surface. Transition metal chalcogenide MoSe2 was deposited under argon atmosphere with the coating time of 30–120 min. The impact of thin film MoSe2 coating on solar cell surface was determined through optical, electrical, morphological and thermal studies. The thickness of optimal MoSe2 coating was found to be 761 nm through Atomic Force Microscopy technique. The maximum optical transmittance of 87.6 % was achieved at 90 min of coating (D3) within the spectrum of 300 to 800 nm wavelength. The minimum electrical resistivity of 90 min coated MoSe2 thin film coating over multicrystalline silicon solar cell was measured as 3.93 × 10− 3 Ω-cm. The enhanced power conversion efficiency of MoSe2 coated solar cell under open and closed conditions were found to be 17.13 and 18.67 % especially for D3 solar cell sample, which facilitates maximum transmission of incident photons into the solar cell. From the observed results, it is evident that MoSe2 nanostructure was found to be promising antireflection coating material for multicrystalline silicon solar cell.

Details

ISSN :
18769918 and 1876990X
Volume :
14
Database :
OpenAIRE
Journal :
Silicon
Accession number :
edsair.doi...........b97d663b13ae09d4e0feed13fc228fc2