A novel vertical sidewall MOSFET using smart source/body contact without floating-body effect

In this paper, we present a new vertical MOS device having smart source/body contact (SSBVMOS). This vertical sidewall MOSFET possesses vertical channel, sidewall gate, and body passway which allow the conduction of both the generated carriers and heat. Thus, the fabricated device can achieve low self-heating effect and good suppression of the floating body effect without occupying excessive area.