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Improvement of Amorphous InGaZnO Thin-Film Transistor Using High-k SrTa2 O6 as Gate Insulator Deposited by Sputtering Method
- Source :
- physica status solidi (a). 216:1700773
- Publication Year :
- 2018
- Publisher :
- Wiley, 2018.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Gate insulator
02 engineering and technology
Surfaces and Interfaces
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Amorphous solid
Sputtering
Thin-film transistor
0103 physical sciences
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
business
High-κ dielectric
Subjects
Details
- ISSN :
- 18626300
- Volume :
- 216
- Database :
- OpenAIRE
- Journal :
- physica status solidi (a)
- Accession number :
- edsair.doi...........b9ee6a539ad09e8f74ffcd7427f35b09
- Full Text :
- https://doi.org/10.1002/pssa.201700773