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Electronic structure and intrinsic dielectric polarization of defect-engineered rutile TiO2
- Source :
- Journal of Materials Chemistry C. 9:595-599
- Publication Year :
- 2021
- Publisher :
- Royal Society of Chemistry (RSC), 2021.
-
Abstract
- Experimental realization of colossal permittivity associated with intrinsic dielectric polarization of defect-engineered (Nb, In) co-doped rutile TiO2 appears to be most suitable for microelectronics and solid-state device applications. Combining resonant photoemission spectroscopy, X-ray absorption spectroscopy, and density functional theory calculations, we here present a coherent understanding of electronic structure, in-gap defect states, doped electron localization, and their connection with macroscopic polarization for various doping configurations. Most often, conventional sample preparation conditions introduce in-gap states of Ti3+δ character, limiting the maximum achievable intrinsic polarization value. Our understanding provides a pathway to enhance intrinsic polarization and minimize dielectric loss through suitable defect-engineering.
Details
- ISSN :
- 20507534 and 20507526
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Chemistry C
- Accession number :
- edsair.doi...........ba80ccd67d0b6940ce5322f98e65e519