Sputtering effects in high dose Bi+ implantation of GaAs

Authors :: H.I. Budinov
Dimitre Karpuzov
Source :: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 47:33-36
Publication Year :: 1990
Publisher :: Elsevier BV, 1990.
Abstract: Semi-insulating Cr-doped (100) GaAs was implanted with Bi+ with energy 40 keV at room temperature in a 7 ° off-axis direction. The implanted dose was varied between 2 × 1015 cm−2 and 1 × 1016 cm−2. The profile evolution was studied experimentally by RBS measurements and theoretically by a new dynamic computer code. It is based on sputtering yield values and impurity depth distributions, obtained by using the static simulation program TRIM.SP.

Subjects :: Nuclear and High Energy Physics
Yield (engineering)
Materials science
Impurity
Sputtering
Analytical chemistry
Static simulation
Atomic physics
Instrumentation
Energy (signal processing)

ISSN :: 0168583X
Volume :: 47
Database :: OpenAIRE
Journal :: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Accession number :: edsair.doi...........bb016df966447a92a92e0034a3c42c3e
Full Text :: https://doi.org/10.1016/0168-583x(90)90044-u