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Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms
- Source :
- Chemistry of Materials. 29:8065-8072
- Publication Year :
- 2017
- Publisher :
- American Chemical Society (ACS), 2017.
-
Abstract
- In this paper, a new atomic layer deposition (ALD) process for depositing binary GeTe and ternary Ge–Sb–Te thin films is reported, where HGeCl3 and ((CH3)3Si)2Te were used as Ge and Te precursors, respectively. The precursors reacted together to form the films at a low substrate temperature of 50–100 °C, without involving any additional reactive process gas. HCl elimination from the Ge precursor to form the divalent Ge intermediate, GeCl2, is proposed to explain the formation of 1:1 composition stoichiometric GeTe films. The GeTe films are promising for use in phase change memory applications. Ternary Ge–Sb–Te films were deposited by combining the GeTe ALD process with a previously developed ALD process for Sb2Te3 films, where Sb(OC2H5)3 and ((CH3)3Si)2Te were employed respectively as the Sb and Te precursors. However, the composition of the ternary GeSbTe films deviated slightly from the desired GeTe–Sb2Te3 pseudobinary composition suggesting that a certain unwanted reaction was involved between the prev...
- Subjects :
- Reaction mechanism
Materials science
General Chemical Engineering
02 engineering and technology
General Chemistry
Substrate (electronics)
GeSbTe
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Phase-change memory
chemistry.chemical_compound
Crystallography
Atomic layer deposition
chemistry
Materials Chemistry
Thin film
0210 nano-technology
Ternary operation
Stoichiometry
Subjects
Details
- ISSN :
- 15205002 and 08974756
- Volume :
- 29
- Database :
- OpenAIRE
- Journal :
- Chemistry of Materials
- Accession number :
- edsair.doi...........bb37960fbbbae5dad7028fad416949b2