Photoluminescence in strained GaSb/InGaSb quantum wells by metalorganic chemical vapor deposition

GaSb/In0.19Ga0.81Sb single quantum well structures have been grown successfully by metalorganic chemical vapor deposition. The conduction band to mj=±3/2 heavy hole (1C‐1HH) transition peak was observed in GaSb/In0.19Ga0.81Sb single quantum well (SQW) with the well width of 100–270 A. From the excitation power dependence of the photoluminescence spectra, the 1C‐1HH transition peak was still observed at low excitation power, 0.31 W/cm2, indicating that the carrier confinement in the well is good. From the temperature dependence of emission intensity of the 1C‐1HH transition, the nonradiative recombination centers were few and less than that of the D°‐A (donor‐acceptor) transition arising from the GaSb barrier layers at temperatures below 30 K. This indicates the good quality of our SQW structure. The dependence of the 1C‐HH transition energy was compared with the theoretical results using a strained model.