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Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers

Authors :
T. A. Nalyot
V. M. Lantratov
V. A. Kapitonov
I. V. Kochnev
D. A. Livshits
A. Yu. Egorov
I. S. Tarasov
Nikolai N. Ledentsov
Source :
Semiconductors. 35:365-369
Publication Year :
2001
Publisher :
Pleiades Publishing Ltd, 2001.

Abstract

Continuous-wave output powers of 9.2 W at a constant heatsink temperature of 10°C and 12.2 W at a stabilized temperature of the active region have been obtained on an InGaAs/AlGaAs laser with a 0.4-µm-thick waveguide, operating at 1.03 µm. Record-breaking output mirror power densities of, respectively, 29.9 and 40 MW/cm2 have been achieved without catastrophic optical mirror damage in the two temperature-stabilization regimes. A maximum power conversion efficiency of 66% has been achieved in a laser with a cavity length of 2 mm.

Details

ISSN :
10906479 and 10637826
Volume :
35
Database :
OpenAIRE
Journal :
Semiconductors
Accession number :
edsair.doi...........bbbb71cf2deb5f32bd9f7baffe3a8e45