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Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

Authors :
Tadas Malinauskas
Pierre Gibart
Saulius Miasojedovas
Bernard Beaumont
Kęstutis Jarašiūnas
Saulius Juršėnas
Source :
Applied Physics Letters. 88:202109
Publication Year :
2006
Publisher :
AIP Publishing, 2006.

Abstract

Optical monitoring of nonequilibrium carrier dynamics was performed in freestanding GaN. Four-wave mixing kinetics directly provided carrier lifetime of 5.4ns in the layer, while complementary measurements by photoluminescence technique revealed the fast transients with subnanosecond decay time. Numerical modeling of photoluminescence decay taking into account the carrier spatial-temporal dynamics allowed us to attribute an origin of the fast photoluminescence transients to carrier diffusion to the bulk and to reabsorption of the backward emission. The studies demonstrated carrier diffusion limited applicability of the time-resolved photoluminescence technique for carrier lifetime measurements in a high quality thick III-nitride layers.

Details

ISSN :
10773118 and 00036951
Volume :
88
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........bc07dc9ae08eab2da607daff830cc4c5
Full Text :
https://doi.org/10.1063/1.2204651