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Enhanced n-doping of epitaxial graphene on SiC by bismuth
- Source :
- Applied Physics Letters. 113:011602
- Publication Year :
- 2018
- Publisher :
- AIP Publishing, 2018.
-
Abstract
- Doping in epitaxial graphene (EG) is challenging because of the high-temperature process and the ultra-thin nature of graphene. In this work, a facile one-step method is demonstrated to generate doping in EG with bismuth (Bi) during thermal decomposition of SiC, in which Bi atom flux acts as the doping source. Raman spectroscopy and scanning tunneling microscopy/spectroscopy are employed to characterize the quality, morphology and electronic properties of Bi doped EG. Both the intercalated and incorporated Bi atoms can be considered as dopants. It was found that the Dirac point shifts away from the Fermi level as a result of electron transfer from Bi to EG, and thus enhances the n-doping behavior of EG significantly. First principles calculations were done to address the enhanced n-doping of EG by Bi. This in-situ doping procedure can be extended to other metals, showing great potential applications in tailoring the performance of EG and significance to electronics in the future.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
chemistry.chemical_element
02 engineering and technology
010402 general chemistry
Epitaxy
01 natural sciences
law.invention
Bismuth
Condensed Matter::Materials Science
symbols.namesake
law
Condensed Matter::Superconductivity
Dopant
Graphene
business.industry
Doping
Fermi level
021001 nanoscience & nanotechnology
0104 chemical sciences
chemistry
symbols
Optoelectronics
Condensed Matter::Strongly Correlated Electrons
Scanning tunneling microscope
0210 nano-technology
business
Raman spectroscopy
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 113
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........bc3fa44421bb9a8cd0125317c10a9200