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The effects of strain on the microwave performance of SiGe HBTs
- Source :
- Microwave and Optical Technology Letters. 6:689-692
- Publication Year :
- 1993
- Publisher :
- Wiley, 1993.
-
Abstract
- The results of a theoretical study of the effects of the strain on the cutoff frequencies of SiGe HBTs are presented. The influence of the strain on the base resistance and transit time, and through them on high-frequency performance, was taken into account. The positive role played by the strain is demonstrated.
- Subjects :
- Materials science
Strain (chemistry)
business.industry
Heterojunction bipolar transistor
Bipolar junction transistor
Heterojunction
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Cutoff frequency
Electronic, Optical and Magnetic Materials
Silicon-germanium
chemistry.chemical_compound
chemistry
Electronic engineering
Optoelectronics
Cutoff
Electrical and Electronic Engineering
business
Microwave
Subjects
Details
- ISSN :
- 10982760 and 08952477
- Volume :
- 6
- Database :
- OpenAIRE
- Journal :
- Microwave and Optical Technology Letters
- Accession number :
- edsair.doi...........bc63a9e3abe14945ba59dc6ff3f26a0e
- Full Text :
- https://doi.org/10.1002/mop.4650061207